FDD3690 Key Features
- 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V
- Low gate charge (28nC typical)
- Fast Switching
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Part: FDD3690
- Description: N-Channel MOSFET
- Manufacturer: onsemi
- Size: 179.04 KB
Other FDD3690 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
FDD3690 | 100V N-Channel PowerTrench MOSFET |