Datasheet4U Logo Datasheet4U.com

FDD3690 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
  • Low gate charge (28nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number FDD3690
Manufacturer onsemi
File Size 179.04 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD3690 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD3690 100V N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDD3670 100V N-Channel PowerTrench MOSFET Fairchild Semiconductor
FDD3672 N-Channel MOSFET Fairchild Semiconductor
FDD3672_F085 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor
FDD3680 100V N-Channel PowerTrench MOSFET Fairchild Semiconductor

Other Datasheets by onsemi

Part Number Description
FDD3670 N-Channel MOSFET
FDD3680 N-Channel MOSFET
FDD3682-F085 N-Channel MOSFET
FDD3510H Dual N & P-Channel Power MOSFET
FDD3860 N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD3690 FDD3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.