Datasheet Details
| Part number | FDD5670 |
|---|---|
| Manufacturer | onsemi |
| File Size | 256.07 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 FDD5670 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
Key Features
- 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V.
- Low gate charge.
- Fast switching.
- High performance trench technology for extremely low RDS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, T.