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MOSFET - Power, Single N-Channel
100 V, 10.5 mW, 51 A
FDD86069-F085
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
51
A
36
68.2 W
34.
FDD86069-F085 Datasheet
