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FDD86250_F085 - 150V 50A N-Channel MOSFET

Key Features

  • Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A.
  • Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A.
  • UIS Capability.
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDD86250_F085 N-Channel Shielded Gate PowerTrench® MOSFET www.onsemi.com FDD86250_F085 (Note1) N-Channel Sheilded Gate PowerTrench® MOSFET 150 V, 50 A, 22 mΩ Features „ Typical RDS(on) = 19.4 mΩ at VGS = 10V, ID = 20 A „ Typical Qg(tot) = 28 nC at VGS = 10V, ID = 40 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems D D G S DTO-P-2A5K2 G (TO-252) S MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.