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FDD86367-F085 - 80V 100A N-Channel MOSFET

Key Features

  • Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A.
  • Typical Qg(tot) = 68 nC at VGS = 10 V, ID = 80 A.
  • UIS Capability.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 80 V, 100 A, 4.2 mW FDD86367-F085 Features • Typical RDS(on) = 3.