FDFMA2P029Z
FDFMA2P029Z is P-Channel MOSFET manufactured by onsemi.
MOSFET
- P-Channel, POWERTRENCH) Integrated with Schottky Diode
-20 V, -3.1 A, 95 m W
FDFMA2P029Z, FDFMA2P029Z-F106
General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. It Features a MOSFET with very low on- state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The Micro FET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
MOSFET
- Max r DS(on) = 95 m W at VGS =
- 4.5 V, ID =
- 3.1 A
- Max r DS(on) = 141 m W at VGS =
- 2.5 V, ID =
- 2.5 A
- HBM ESD Protection Level > 2.5 k V (Note 1)
Schottky
- VF < 0.37 V @ 500 m A
- Low Profile
- 0.8 mm Maximum
- In the New Package Micro FET
2x2 mm
- These Devices are Pb- Free and are Ro HS pliant
NOTE: 1. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
DATA SHEET .onsemi.
VDS MAX
- 20 V
MOSFET r DS(on) MAX 95 m W @
- 4.5 V 141 m W @
- 2.5 V
ID...
