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FDFMA2P029Z - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

Key Features

  • MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General.

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Full PDF Text Transcription (Reference)

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FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Features MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 95mΩ at VGS = –4.5V, ID = –3.1A „ Max rDS(on) = 141mΩ at VGS = –2.5V, ID = –2.5A Schottky „ VF < 0.