FDFMA2P029Z-F106 Datasheet | onsemi

MOSFET - P-Channel, POWERTRENCH) Integrated with Schottky Diode -20 V, -3.1 A, 95 m W FDFMA2P029Z, FDFMA2P029Z-F106 General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. It Features a MOSFET with very low on- state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The Micro FET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features MOSFET - Max r DS(on) = 95 m W at VGS = - 4.5 V, ID = - 3.1 A - Max r DS(on) = 141 m W at VGS = - 2.5 V, ID = - 2.5 A - HBM ESD Protection Level > 2.5 k V (Note 1) Schottky - VF < 0.37 V @ 500 m A - Low Profile - 0.8 mm Maximum - In the New Package Micro FET 2x2 mm - These Devices are Pb- Free and are Ro HS pliant NOTE: 1. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. DATA SHEET .onsemi. VDS MAX - 20 V MOSFET r DS(on) MAX 95 m W @ - 4.5 V 141 m W @ - 2.5 V ID...