FDMA8878-F130 Datasheet | onsemi

Description This N- Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance. Features - Max RDS(on) = 16 m W @ VGS = 10 V, ID = 9.0 A - Max RDS(on) = 19 m W @ VGS = 4.5 V, ID = 8.5 A - High Performance Trench Technology for Extremely Low RDS(on) - Fast Switching Speed - Pb- Free, Halide Free and Ro HS pliant Applications - DC- DC Buck Converters - Load Switch in NB - Notebook Battery Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage (Note 3) Drain Current Continuous (Package Limited), TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed ±20 A 10 9.0 40 Power Dissipation, TA = 25°C (Note 1a) (Note 1b) W 2.4 0.9 TJ, TSTG Operating and Storage Junction Temperature Range - 55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rq...