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FDMA8878-F130 - N-Channel MOSFET

Download the FDMA8878-F130 datasheet PDF. This datasheet also covers the FDMA8878 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

POWERTRENCH process that has been optimized for RDS(on), switching performance.

Key Features

  • Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A.
  • Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • Fast Switching Speed.
  • Pb.
  • Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMA8878-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
+ MOSFET – N-Channel, POWERTRENCH) 30 V, 9.0 A, 16 mW FDMA8878, FDMA8878-F130 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance. Features • Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A • Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A • High Performance Trench Technology for Extremely Low RDS(on) • Fast Switching Speed • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Buck Converters • Load Switch in NB • Notebook Battery Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.