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MOSFET – N-Channel, POWERTRENCH)
30 V, 9.0 A, 16 mW
FDMA8878, FDMA8878-F130
General Description This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance.
Features
• Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A • Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A • High Performance Trench Technology for Extremely Low RDS(on) • Fast Switching Speed • Pb−Free, Halide Free and RoHS Compliant
Applications
• DC−DC Buck Converters • Load Switch in NB • Notebook Battery Power Management
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
FDMA8878 Datasheet
