FDMA8878 - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH process that has been optimized for RDS(on), switching performance.

Key Features

Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A.
Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A.
High Performance Trench Technology for Extremely Low RDS(on).
Fast Switching Speed.
Pb.
Free, Halide Free and RoHS Compliant.

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FDMA8878 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMA8878
Manufacturer	onsemi
File Size	245.25 KB
Description	N-Channel MOSFET
Datasheet	FDMA8878 Datasheet

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FDMA8878-F130	N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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+ MOSFET – N-Channel, POWERTRENCH) 30 V, 9.0 A, 16 mW FDMA8878, FDMA8878-F130 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance. Features • Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A • Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A • High Performance Trench Technology for Extremely Low RDS(on) • Fast Switching Speed • Pb−Free, Halide Free and RoHS Compliant Applications • DC−DC Buck Converters • Load Switch in NB • Notebook Battery Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.