FDMA8878
FDMA8878 is N-Channel MOSFET manufactured by onsemi.
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance.
Features
- Max RDS(on) = 16 m W @ VGS = 10 V, ID = 9.0 A
- Max RDS(on) = 19 m W @ VGS = 4.5 V, ID = 8.5 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Fast Switching Speed
- Pb- Free, Halide Free and Ro HS pliant
Applications
- DC- DC Buck Converters
- Load Switch in NB
- Notebook Battery Power Management
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted.
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note 3)
Drain Current
Continuous (Package Limited),
TC = 25°C Continuous, TA = 25°C (Note 1a) Pulsed
±20
A 10
9.0 40
Power Dissipation, TA = 25°C
(Note 1a)
(Note 1b)
W 2.4 0.9
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Rq...
