FDMA8878 Overview
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance.
FDMA8878 Key Features
- Max RDS(on) = 16 mW @ VGS = 10 V, ID = 9.0 A
- Max RDS(on) = 19 mW @ VGS = 4.5 V, ID = 8.5 A
- High Performance Trench Technology for Extremely Low RDS(on)
- Fast Switching Speed
- Pb-Free, Halide Free and RoHS pliant
