FDMA8878 Overview
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance.
FDMA8878 Key Features
- Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A
- Max rDS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A
- High performance trench technology for extremely low rDS(on)
- Fast switching speed
- RoHS pliant
- DC/DC Buck Converters
- Load Switch in NB
- Notebook Battery Power Management
