FDMA8878 Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 16 mΩ at VGS = 10 V, ID = 9.0 A - Max r DS(on) = 19 mΩ at VGS = 4.5 V, ID = 8.5 A - High performance trench technology for extremely low r DS(on) - Fast switching speed - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance. Application - DC/DC Buck Converters - Load Switch in NB - Notebook Battery Power Management Pin 1 Bottom Drain Contact Drain Source D G S D D Micro FET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TC = 25 °C TA = 25 °C (Note 1a) (Note 3) Ratings 30 ±20 10 9.0 40 2.4 0.9 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 52 145 °C/W Package Marking and Ordering Information Device Marking 878 Device FDMA8878 Package Micro FET 2x2 Reel Size 7 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMA8878 Rev.C .fairchildsemi. FDMA8878 Single N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25 °C VDS = 24 V, VGS = 0 V 30 26 1 100 V m V/°C μA n A Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V On Characteristics VGS(th) ΔVGS(th) ΔTJ r DS(on) g FS Gate to Source Threshold Voltage Gate to Source Threshold Voltage...