FDMA910PZ
Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and zener diode protection against ESD.
Key Features
- Max rDS(on) = 20 mW at VGS = -4.5 V, ID = -9.4 A
- Max rDS(on) = 24 mW at VGS = -2.5 V, ID = -8.6 A
- Max rDS(on) = 34 mW at VGS = -1.8 V, ID = -7.2 A
- 0.8 mm Maximum in the New Package MicroFET 2x2 mm
- HBM ESD Protection Level > 2.8 kV Typical (Note
- Free from Halogenated pounds and Antimony Oxides
- Continuous TA = 25°C (Note 1a)
- 45 PD Power Dissipation TA = 25°C (Note 1a) TA = 25°C (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 2.4 0.9
