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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH)
-20 V, -9.4 A, 20 mW
FDMA910PZ
General Description This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance and zener diode protection against ESD. The MicroFETt 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• Max rDS(on) = 20 mW at VGS = −4.5 V, ID = −9.4 A • Max rDS(on) = 24 mW at VGS = −2.5 V, ID = −8.6 A • Max rDS(on) = 34 mW at VGS = −1.8 V, ID = −7.2 A • Low Profile − 0.8 mm Maximum in the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 2.
FDMA910PZ Datasheet
