Datasheet4U Logo Datasheet4U.com

FDMC4435BZ - P-Channel MOSFET

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

  • Max rDS(on) = 20 mW at VGS =.
  • 10 V, ID =.
  • 8.5 A.
  • Max rDS(on) = 37 mW at VGS =.
  • 4.5 V, ID =.
  • 6.3 A.
  • Extended VGSS Range (.
  • 25 V) for Battery.

📥 Download Datasheet

Datasheet preview – FDMC4435BZ

Datasheet Details

Part number FDMC4435BZ
Manufacturer ON Semiconductor
File Size 591.89 KB
Description P-Channel MOSFET
Datasheet download datasheet FDMC4435BZ Datasheet
Additional preview pages of the FDMC4435BZ datasheet.

📁 Similar Datasheet

  • FDMC4435BZ - MOSFET (Fairchild Semiconductor)
  • FDMC0310AS - MOSFET (Fairchild Semiconductor)
  • FDMC15N06 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC2512SDC - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC2514SDC - N-Channel Dual Cool PowerTrench SyncFET (Fairchild Semiconductor)
  • FDMC2514SDC - N-Channel MOSFET (VBsemi)
  • FDMC2523P - P-Channel QFET (Fairchild Semiconductor)
  • FDMC2610 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
  • FDMC2674 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
  • FDMC3020DC - N-Channel Dual Cool PowerTrench MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701 General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features  Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A  Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.
Published: |