FDMC4435BZ Description
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability HBM ESD protection level >7 kV typical (Note 4) 100% UIL Tested Termination is Lead-free and RoHS pliant This P-Channel MOSFET is produced using...
FDMC4435BZ Key Features
- Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A
- Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.3 A
- Extended VGSS range (-25 V) for battery