FDMC4435BZ-F127 Datasheet PDF (P-Channel MOSFET) | Download ON Semiconductor FDMC4435BZ-F127

FDMC4435BZ-F127 - P-Channel MOSFET

This page provides the datasheet information for the FDMC4435BZ-F127, a member of the FDMC4435BZ P-Channel MOSFET family.

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

Max rDS(on) = 20 mW at VGS =.
10 V, ID =.
8.5 A.
Max rDS(on) = 37 mW at VGS =.
4.5 V, ID =.
6.3 A.
Extended VGSS Range (.
25 V) for Battery.

Datasheet Details

Part number	FDMC4435BZ-F127
Manufacturer	ON Semiconductor
File Size	591.89 KB
Description	P-Channel MOSFET
Datasheet	FDMC4435BZ-F127 Datasheet
Additional preview pages of the FDMC4435BZ-F127 datasheet.

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Full PDF Text Transcription

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MOSFET – P-Channel, POWERTRENCH) -30 V, -18 A, 20 mW FDMC4435BZ, FDMC4435BZ-F127, FDMC4435BZ-F127-L701 General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features  Max rDS(on) = 20 mW at VGS = −10 V, ID = −8.5 A  Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −6.

Published: Dec 19, 2023 |