FDMC86183 - N-Channel MOSFET

onsemi

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance with best in class soft body diode.

Key Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A.
Max RDS(on) = 34.6 mW at VGS = 6 V, ID = 8 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

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FDMC86183 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDMC86183
Manufacturer	onsemi
File Size	398.62 KB
Description	N-Channel MOSFET
Datasheet	FDMC86183 Datasheet

Full PDF Text Transcription for FDMC86183 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FDMC86183. For precise diagrams, and layout, please refer to the original PDF.

MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 100 V, 47 A, 12.8 mW FDMC86183 General Description This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENC...

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his N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A • Max RDS(on) = 34.

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