Datasheet Details
| Part number | FDMC86184 |
|---|---|
| Manufacturer | onsemi |
| File Size | 292.61 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDMC86184 Datasheet
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General Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Key Features
- Shielded Gate MOSFET Technology.
- Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A.
- Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A.
- 50% Lower Qrr than Other MOSFET Suppliers.
- Lowers Switching Noise/EMI.
- MSL1 Robust Package Design.
- 100% UIL Tested.
- RoHS Compliant General.