Download FDMC86184 Datasheet PDF
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FDMC86184 Description

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode. Applications „ Primary DC-DC MOSFET „ Synchronous Rectifier in DC-DC and AC-DC „ Motor Drive „ Solar Pin 1 Pin 1 SS S S D G S D D D DD...

FDMC86184 Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A
  • Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS pliant