FDMC86184
Description
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A
- Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
Applications
- Synchronous Rectifier in DC-DC and AC-DC
