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FDMC8882 - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on

state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Key Features

  • Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A.
  • Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A.
  • High Performance Technology for Extremely Low RDS(on).
  • Termination is Lead.
  • Free.
  • RoHS Compliant.

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Datasheet Details

Part number FDMC8882
Manufacturer onsemi
File Size 429.69 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8882 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 16 A, 14.3 mohm FDMC8882 Description This N−Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A • Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A • High Performance Technology for Extremely Low RDS(on) • Termination is Lead−Free • RoHS Compliant Applications • High Side in DC−DC Buck Converters • Notebook Battery Power Management • Load Switch in Notebook DATA SHEET www.onsemi.com 8765 Pin 1 SSSG 1234 Top DDDD Bottom WDFN8 3.3x3.3, 0.