FDMT800100DC Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient.
FDMT800100DC Key Features
- Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A
- Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A
- Advanced Package and Silicon bination for Low rDS(on)
- Next Generation Enhanced Body Diode Technology
- Low Profile 8 x 8 mm MLP Package
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant