Datasheet Summary
FDMT800100DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET
July 2015
N-Channel Dual CoolTM 88 PowerTrench® MOSFET
100 V, 162 A, 2.95 mΩ
Features
- Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- Low profile 8x8mm MLP package
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been bined to offer the lowest rDS(on) while maintaining...
