FDMT800100DC Datasheet and Specifications PDF

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while main.

* Max rDS(on) = 2.95 mW at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.46 mW at VGS = 6 V, ID = 19 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* Low Profile 8 x 8 mm MLP Package
* MSL1 Rob.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowes.

* Max rDS(on) = 2.95 mΩ at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.46 mΩ at VGS = 6 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* Low profile 8x8mm MLP package General Desc.