FDN86246 - N-Channel MOSFET

onsemi

General Description

This N

POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness.

Key Features

Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A.
Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
Pb.
Free, Halide Free and RoHS Compliant.

📥 Download Datasheet

FDN86246 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN86246
Manufacturer	onsemi
File Size	313.19 KB
Description	N-Channel MOSFET
Datasheet	FDN86246 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDN86246	MOSFET	Fairchild Semiconductor
FDN86265P	MOSFET	Fairchild Semiconductor
FDN8601	MOSFET	Fairchild Semiconductor
FDN8601	N-Channel MOSFET	TY Semiconductor
FDN86501LZ	MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description
FDN86265P	P-Channel MOSFET
FDN8601	N-Channel MOSFET
FDN86501LZ	N-Channel MOSFET
FDN028N20	N-Channel MOSFET
FDN302P	P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel, POWERTRENCH) 150 V, 1.6 A, 261 mW FDN86246 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for rDS(on), switching performance and ruggedness. Features • Max rDS(on) = 261 mW at VGS = 10 V, ID = 1.6 A • Max rDS(on) = 359 mW at VGS = 6 V, ID = 1.4 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • Pb−Free, Halide Free and RoHS Compliant Application • PD Switch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.