FDN86246
Description
This N- Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for r DS(on), switching performance and ruggedness.
Features
- Max r DS(on) = 261 m W at VGS = 10 V, ID = 1.6 A
- Max r DS(on) = 359 m W at VGS = 6 V, ID = 1.4 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- Pb- Free, Halide Free and Ro HS pliant
Application
- PD Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Drain Current
- Continuous (Note 1a)
- Pulsed
±20
A 1.6 6
Single Pulse Avalanche Energy
(Note 3)
13 m J
Maximum Power Dissipation
(Note 1a)
(Note 1b)
W 1.5...
