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FDPF55N06 - N-Channel MOSFET

General Description

on planar stripe and DMOS technology.

state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 22 mW (Typ. ) @ VGS = 10 V, ID = 27.5 A.
  • Low Gate Charge (Typ. 30 nC).
  • Low Crss (Typ. 60 pF).
  • 100% Avalanche Tested DATA SHEET www. onsemi. com D G S GDS TO.
  • 220.
  • 3LD CASE 340AT GDS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT.

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Datasheet Details

Part number FDPF55N06
Manufacturer onsemi
File Size 445.78 KB
Description N-Channel MOSFET
Datasheet download datasheet FDPF55N06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETt 60 V, 55 A, 22 mW FDP55N06 / FDPF55N06 Description UniFET MOSFET is onsemi's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 22 mW (Typ.) @ VGS = 10 V, ID = 27.5 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ. 60 pF) • 100% Avalanche Tested DATA SHEET www.onsemi.