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FDS8878-F123 - N-Channel MOSFET

Download the FDS8878-F123 datasheet PDF. This datasheet also covers the FDS8878 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A.
  • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDS8878-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by onsemi

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FDS8878 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.