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FDS8878-F123 Datasheet N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – N-Channel, POWERTRENCH) 30 V, 10.2 A, 14 mW FDS8878, FDS8878-F123.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Key Features

  • rDS(on) = 14 mW, VGS = 10 V, ID = 10.2 A.
  • rDS(on) = 17 mW, VGS = 4.5 V, ID = 9.3 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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FDS8878-F123 Distributor