FDT86102LZ Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss. G−S zener has been added to enhance ESD voltage level. S D G SOT−223 CASE 318H MARKING DIAGRAM.
FDT86102LZ Key Features
- Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A
- Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A
- HBM ESD Protection Level > 6 kV Typical (Note 4)
- Very Low Qg and Qgd pared to peting Trench Technologies
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant