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FDT86102LZ - N-Channel MOSFET

General Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and switching loss.

S zener has been added to enhance ESD voltage level.

223 CASE 318H MARKING DIAGRAM Fea

Key Features

  • Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A.
  • Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.5 A.
  • HBM ESD Protection Level > 6 kV Typical (Note 4).
  • Very Low Qg and Qgd Compared to Competing Trench Technologies.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant AYW 102LZ 1 A Y W 102LZ = Assembly Location = Year = Work Week = Specific Device Code.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) D 100 V, 6.6 A, 28 mW FDT86102LZ General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss. G−S zener has been added to enhance ESD voltage level. S D G SOT−223 CASE 318H MARKING DIAGRAM Features • Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.6 A • Max rDS(on) = 38 mW at VGS = 4.5 V, ID = 5.