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FDT86106LZ - N-Channel MOSFET

General Description

This N Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on

state resistance and yet maintain superior switching performance.

S zener has been added to enhance ESD voltage level.

Key Features

  • Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A.
  • Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • HBM ESD Protection Level > 3 kV Typical (Note 4).
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 100 V, 3.2 A, 108 mW FDT86106LZ General Description This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level. Features  Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A  Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.