FDT86106LZ Description
This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level.
FDT86106LZ Key Features
- Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
- Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- HBM ESD Protection Level > 3 kV Typical (Note 4)
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant