FDT86102LZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDT86102LZ
Manufacturer	Fairchild Semiconductor
File Size	261.83 KB
Description	MOSFET
Datasheet	FDT86102LZ Datasheet
Additional preview pages of the FDT86102LZ datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. DC-DC conversion Inverter Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volt

Features

Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A.
Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A.
HBM ESD protection level > 6 kV typical (Note 4).
Very low Qg and Qgd compared to competing trench technologies.
Fast switching speed.
100% UIL Tested.
RoHS Compliant General.

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Published: Jan 11, 2017 |