FDT86102LZ
Features
- Max r DS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
- Max r DS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
- HBM ESD protection level > 6 k V typical (Note 4)
- Very low Qg and Qgd pared to peting trench technologies
- Fast switching speed
- 100% UIL Tested
- Ro HS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
Applications
- DC-DC conversion
- Inverter
- Synchronous Rectifier
SOT-223
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power...
