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FDT86102LZ - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

DC-DC conversion Inverter

Key Features

  • Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A.
  • Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A.
  • HBM ESD protection level > 6 kV typical (Note 4).
  • Very low Qg and Qgd compared to competing trench technologies.
  • Fast switching speed.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A „ Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.