FDT86106LZ
FDT86106LZ is MOSFET manufactured by Fairchild Semiconductor.
FDT86106LZ N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
100 V, 3.2 A, 108 mΩ
Features
General Description
January 2013
- Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
- Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- HBM ESD protection level > 3 KV typical (Note 4)
- 100% UIL tested
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S...
