The FDT86106LZ is a N-Channel MOSFET.
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Height | 1.8 mm |
| Length | 3.7 mm |
| Width | 6.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDT86106LZ Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel logic Level MOSFETs are produced using
onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching perfo.
* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A * Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * HBM ESD Protection Level > 3 kV Typical (Note 4) * 1. |
| Part Number | FDT86106LZ Datasheet |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
January 2013
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and curren.
General Description
January 2013
* Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A * Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package * HBM ESD protecti. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rochester Electronics | 99 | 100+ : 0.6927 USD 500+ : 0.6234 USD 1000+ : 0.5749 USD 10000+ : 0.5126 USD |
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| DigiKey | 18 | 1+ : 2.17 USD 10+ : 1.386 USD 100+ : 0.9368 USD 500+ : 0.74448 USD |
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| DigiKey | 18 | 1+ : 2.17 USD 10+ : 1.386 USD 100+ : 0.9368 USD 500+ : 0.74448 USD |
View Offer |