FDT86106LZ Datasheet and Specifications PDF

The FDT86106LZ is a N-Channel MOSFET.

Key Specifications

PackageSOT-223
Mount TypeSurface Mount
Pins4
Height1.8 mm
Length3.7 mm
Width6.7 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberFDT86106LZ Datasheet
Manufactureronsemi
Overview This N−Channel logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been special tailored to minimize the on−state resistance and yet maintain superior switching perfo.
* Max rDS(on) = 108 mW at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* HBM ESD Protection Level > 3 kV Typical (Note 4)
* 1.
Part NumberFDT86106LZ Datasheet
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview January 2013 „ Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A „ Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and curren. General Description January 2013
* Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
* Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount package
* HBM ESD protecti.

Price & Availability

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Rochester Electronics 99 100+ : 0.6927 USD
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DigiKey 18 1+ : 2.17 USD
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DigiKey 18 1+ : 2.17 USD
10+ : 1.386 USD
100+ : 0.9368 USD
500+ : 0.74448 USD
View Offer