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FFSB20120A-F085 - Silicon Carbide Schottky Diode

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 200 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • AEC.
  • Q101 qualified.

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FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.