FFSB20120A-F085 Datasheet | onsemi

Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175°C - Avalanche Rated 200 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - AEC- Q101 qualified Applications - Automotive HEV- EV Onboard Chargers - Automotive HEV- EV DC- DC Converters .onsemi. 1.,3. Cathode 2. Anode Schottky Diode 3 1 2 D2PAK- 3(TO- 263, 3- LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 20120A $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FFSB20120A = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2013 September, 2019 - Rev. 0 Publication Order Number: FFSB20120A- F085/D FFSB20120A-...