FFSB2065BDN-F085 Datasheet | onsemi

Silicon Carbide (Si C) Schottky Diode - Elite Si C, 20 A, 650 V, D2, D2PAK-3L Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features - Max Junction Temperature 175°C - Avalanche Rated 49 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - AEC- Q101 Qualified and PPAP Capable Applications - Automotive BEV- EV - Automotive HEV- EV Onboard Chargers - Automotive HEV- EV DC- DC Converters MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage EAS Single Pulse Avalanche Energy (Note 1) 49 m J Continuous Recti- @ TC < 25°C fied Forward Current @ TC < 140°C IF, Max Non- Repetitive TC = 25°C, 10 ms Peak Forward Surge...