FFSD08120A Datasheet | onsemi

Silicon Carbide Schottky Diode 1200 V, 8 A Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Features - Max Junction Temperature 175°C - Avalanche Rated 80 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - This Device is Pb- Free, Halogen Free/BFR Free and Ro HS pliant Applications - General Purpose - SMPS, Solar Inverter, UPS - Power Switching Circuits .onsemi. 1, 2, 4. Cathode 3. Anode Schottky Diode 12 3 DPAK3 CASE 369AS MARKING DIAGRAM $Y&Z&3&K FFS D08120A $Y &Z &3 &K FFSD08120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2017 January, 2020 - Rev. 3 Publication Order Number:...