Datasheet4U Logo Datasheet4U.com

FFSH10120A - SiC Schottky Diode

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 100 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Full PDF Text Transcription for FFSH10120A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FFSH10120A. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-2L FFSH10120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology ...

View more extracted text
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

More Datasheets from onsemi

Part Number Description
FFSH15120A Silicon Carbide Schottky Diode
FFSH1665A Silicon Carbide Schottky Diode
FFSH20120A Silicon Carbide Schottky Diode
FFSH20120A-F085 Silicon Carbide Schottky Diode
FFSH30120A-F155 SiC Schottky Diode
FFSH3065B SiC Schottky Diode
FFSH5065A-F155 SiC Schottky Diode
FFSH5065B-F085 SiC Schottky Diode
FFSB0665A SiC Schottky Diode
FFSB0665B SiC Schottky Diode