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FFSH15120A - Silicon Carbide Schottky Diode

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 145 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and RoHS Compliant.

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Datasheet Details

Part number FFSH15120A
Manufacturer onsemi
File Size 399.74 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSH15120A Datasheet

Full PDF Text Transcription for FFSH15120A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FFSH15120A. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology ...

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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

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