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FFSH1665A - Silicon Carbide Schottky Diode

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 81 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number FFSH1665A
Manufacturer onsemi
File Size 429.80 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSH1665A Datasheet

Full PDF Text Transcription for FFSH1665A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FFSH1665A. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide Schottky Diode 650 V, 16 A FFSH1665A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching pe...

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es use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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