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FFSH1665A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 81 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet preview – FFSH1665A

Datasheet Details

Part number FFSH1665A
Manufacturer ON Semiconductor
File Size 429.80 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSH1665A Datasheet
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Full PDF Text Transcription

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Silicon Carbide Schottky Diode 650 V, 16 A FFSH1665A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
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