FFSH20120A - Silicon Carbide Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175°C.
Avalanche Rated 200 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.
This Device is Pb.
Free, Halogen Free/BFR Free and RoHS Compliant.

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FFSH20120A silicon carbide schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	FFSH20120A
Manufacturer	onsemi
File Size	329.07 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSH20120A Datasheet

Full PDF Text Transcription for FFSH20120A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FFSH20120A. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L FFSH20120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology ...

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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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