FFSH3065B - SiC Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175°C.
Avalanche Rated 144 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.
AEC.
Q101 Qualified.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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FFSH3065B sic schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	FFSH3065B
Manufacturer	onsemi
File Size	366.41 KB
Description	SiC Schottky Diode
Datasheet	FFSH3065B Datasheet

Full PDF Text Transcription for FFSH3065B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FFSH3065B. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2, TO-247-2L FFSH3065B Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology th...

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licon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

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