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FFSP0665A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175 oC.
  • Avalanche Rated 36 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Datasheet Details

Part number FFSP0665A
Manufacturer ON Semiconductor
File Size 376.35 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSP0665A Datasheet
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Full PDF Text Transcription

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FFSP0665A — Silicon Carbide Schottky Diode www.onsemi.com FFSP0665A Silicon Carbide Schottky Diode 650 V, 6 A Features • Max Junction Temperature 175 oC • Avalanche Rated 36 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
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