FFSP08120A
FFSP08120A is Silicon Carbide Schottky Diode manufactured by onsemi.
- Silicon Carbide Schottky Diode
Silicon Carbide Schottky Diode
1200 V, 8 A Features
- Max Junction Temperature 175 °C
- Avalanche Rated 80 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
November 2016
Description
Silicon Carbide (SiC) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon...
