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FFSP08120A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175 °C.
  • Avalanche Rated 80 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Datasheet Details

Part number FFSP08120A
Manufacturer ON Semiconductor
File Size 222.62 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSP08120A Datasheet
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Full PDF Text Transcription

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FFSP08120A — Silicon Carbide Schottky Diode FFSP08120A Silicon Carbide Schottky Diode 1200 V, 8 A Features • Max Junction Temperature 175 °C • Avalanche Rated 80 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
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