FFSP0865A - Silicon Carbide Schottky Diode

onsemi

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

Max Junction Temperature 175°C.
Avalanche Rated 49 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery/No Forward Recovery.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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FFSP0865A silicon carbide schottky diode by onsemi - Datasheet Preview

Datasheet Details

Part number	FFSP0865A
Manufacturer	onsemi
File Size	138.05 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSP0865A Datasheet

📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

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FFSP0865A Silicon Carbide Schottky Diode 650 V, 8 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.