FFSP10120A - Silicon Carbide Schottky Diode

Product Overview

ON Semiconductor

Datasheet Details

Part number	FFSP10120A
Manufacturer	ON Semiconductor
File Size	228.27 KB
Description	Silicon Carbide Schottky Diode
Datasheet	FFSP10120A Datasheet
Additional preview pages of the FFSP10120A datasheet.

Product details

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

Max Junction Temperature 175 °C.
Avalanche Rated 100 mJ.
High Surge Current Capacity.
Positive Temperature Coefficient.
Ease of Paralleling.
No Reverse Recovery / No Forward Recovery.

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Published: May 28, 2019 |