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FFSP15120A - Silicon Carbide Schottky Diode

Datasheet Summary

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175 °C.
  • Avalanche Rated 145 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Datasheet Details

Part number FFSP15120A
Manufacturer ON Semiconductor
File Size 234.38 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSP15120A Datasheet
Additional preview pages of the FFSP15120A datasheet.

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Full PDF Text Transcription

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FFSP15120A — Silicon Carbide Schottky Diode FFSP15120A Silicon Carbide Schottky Diode 1200 V, 15 A Features • Max Junction Temperature 175 °C • Avalanche Rated 145 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
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