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FFSP2065BDN-F085 - Silicon Carbide Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 49 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.
  • AEC.
  • Q101 Qualified.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet preview – FFSP2065BDN-F085

Datasheet Details

Part number FFSP2065BDN-F085
Manufacturer ON Semiconductor
File Size 296.73 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet FFSP2065BDN-F085 Datasheet
Additional preview pages of the FFSP2065BDN-F085 datasheet.

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Full PDF Text Transcription

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-3L Product Preview FFSP2065BDN-F085 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
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