FFSP2065BDN-F085 Datasheet | onsemi

Silicon Carbide (Si C) Schottky Diode - Elite Si C, 20 A, 650 V, D2, TO-220-3L Product Preview FFSP2065BDN-F085 Description Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. Features - Max Junction Temperature 175°C - Avalanche Rated 49 m J - High Surge Current Capacity - Positive Temperature Coefficient - Ease of Paralleling - No Reverse Recovery/No Forward Recovery - AEC- Q101 Qualified - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Applications - Automotive HEV- EV Onboard Chargers - Automotive HEV- EV DC- DC Converters This document contains information on a product under development. onsemi reserves the right to change or discontinue this product without notice. DATA SHEET .onsemi. 1 Anode 2 Cathode/ Case 3 Anode Schottky Diode TO- 220- 3LD CASE 340AT MARKING DIAGRAM AXYYKK FFSP 2065BDN A XYY KK FFSP2065BDN = Assembly Plant Code = Date Code (Year & Week) = Lot Traceability Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data...