FGAF30S65AQ
FGAF30S65AQ is IGBT manufactured by onsemi.
Field Stop Trench IGBT, 30 A, 650 V
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for PFC applications and welder where low conduction and switching losses are essential.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.4 V (Typ.) @ IC = 30 A
- 100% of the Parts Tested for ILM (Note 1)
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- IGBT with Monolithic Reverse Conducting Diode
- This Device is Pb- Free and is Ro HS pliant
Typical Applications
- PFC, Welder
MAXIMUM RATINGS Rating
Symbol Value Unit
Collector to Emitter Voltage
Gate to Emitter Voltage Transient Gate to Emitter Voltage
VCES
VGES
±20
±30
Collector Current
@TC = 25°C
@TC = 100°C
Pulsed Collector Current (Note 1)
Pulsed Collector Current (Note 2)
Diode Forward Current @TC = 25°C
@ TC =...
