Datasheet Summary
NPT Trench lGBT
1200 V, 25 A
Description Using onsemi’s proprietary trench design and advanced NPT
Technology, the 1200 V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.
Features
- NPT Trench Technology, Positive Temperature Coefficient
- Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25 °C
- Low Switching Loss: ECE off, typ = 0.96 mJ
@ IC = 25 A and TC = 25 °C
- Extremely Enhanced Avalanche Capability
- This Device is Pb-Free Halide, Free and RoHS pliant
Applications...
