Datasheet4U Logo Datasheet4U.com

FGA25N120ANTDTU - IGBT

General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

  • NPT Trench Technology, Positive Temperature Coefficient.
  • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C.
  • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C.
  • Extremely Enhanced Avalanche Capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FGA25N120ANTDTU NPT Trench IGBT ON Semiconductor
FGA25N120ANTDTU-F109 NPT Trench IGBT ON Semiconductor
FGA25N120 NPT Trench IGBT ON Semiconductor
FGA25S125P 25A Shorted-anode IGBT ON Semiconductor
FGA04 Photodiodes Thorlabs

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FGA25N120ANTD NPT Trench IGBT
FGA25N120ANTD_F109 25A NPT Trench IGBT
FGA25N120AN IGBT
FGA25N120AND IGBT
FGA25N120FTD Field Stop Trench IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven April 2014 Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.