FGA25N120AND Datasheet | Fairchild Semiconductor

Description Employing NPT technology, Fairchild’s AND series of IGBTs provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). Features - - - - High speed switching Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A High input impedance CO-PAK, IGBT with FRD : trr = 235ns (typ.) Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. TO-3P Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA25N120AND 1200 ± 20 40 25 75 25 150 310 125 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.4 2.0 40 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation FGA25N120AND Rev. A Electrical Characteristics of the IGBT T Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 3m A VGE = 0V, IC = 3m A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----3 ±...