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FGH12040WD - IGBT

General Description

series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ =175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • Low Saturation Voltage: VCE(sat) = 2.3 V (Typ. ) @ IC = 40 A.
  • 100% of the Parts Tested for ILM (Note 1).
  • Short Circuit Ruggedness > 5 us @ 150°C.
  • High Input Impedance.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 1200 V, 40 A FGH12040WD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for welder applications where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ =175°C • Positive Temperature Co−efficient for Easy Parallel Operating • Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A • 100% of the Parts Tested for ILM (Note 1) • Short Circuit Ruggedness > 5 us @ 150°C • High Input Impedance • This Device is Pb−Free and is RoHS Compliant Applications • Only for Welder www.onsemi.