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FGH25N120FTDS - IGBT

General Description

1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A.
  • High Input Impedance.
  • These Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS Description Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. Features • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A • High Input Impedance • These Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC www.onsemi.