FGH40T65SPD Overview
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, tele, ESS and PFC applications where low conduction and switching losses are essential.
FGH40T65SPD Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.85 V (Typ.) @ IC = 40 A
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- Short Circuit Ruggedness > 5 ms @ 25°C
- This Device is Pb-Free and is RoHS pliant
